Samsung MZ-V8P2T0BW internal solid state drive M.2 2 TB PCI Express 4.0 V-NAND MLC NVMe
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Hard drive
PCI Express interface data lanes
x4
SSD capacity
2000 GB
Memory type
V-NAND MLC
Data transmission
Read speed
7000 MB/s
Write speed
5100 MB/s
Random write (4KB)
1000000 IOPS
Random read (4KB)
1000000 IOPS
Security
Security algorithms
256-bit AES
Endurance
Mean time between failures (MTBF)
1500000 h
Performance
Interface
PCI Express 4.0
Component for
PC/notebook
NVMe
Yes
NVMe version
1.3c
PCI Express interface data lanes
x4
SSD capacity
2000 GB
Security algorithms
256-bit AES
S.M.A.R.T. support
Yes
Read speed
7000 MB/s
TRIM support
Yes
Write speed
5100 MB/s
Memory type
V-NAND MLC
Random write (4KB)
1000000 IOPS
Random read (4KB)
1000000 IOPS
Mean time between failures (MTBF)
1500000 h
Hardware encryption
Yes
Design
Component for
PC/notebook
SSD form factor
M.2
Features
Interface
PCI Express 4.0
Component for
PC/notebook
NVMe
Yes
NVMe version
1.3c
PCI Express interface data lanes
x4
SSD capacity
2000 GB
Security algorithms
256-bit AES
S.M.A.R.T. support
Yes
Read speed
7000 MB/s
TRIM support
Yes
Write speed
5100 MB/s
Memory type
V-NAND MLC
Random write (4KB)
1000000 IOPS
Random read (4KB)
1000000 IOPS
Mean time between failures (MTBF)
1500000 h
Hardware encryption
Yes
SSD form factor
M.2
Power
Power consumption (average)
6.1 W
Power consumption (max)
7.2 W
Power consumption (standby)
0.035 W
Operating voltage
3.3 V
Operational conditions
Operating temperature (T-T)
0 - 70 °C
Operating shock
1500 G
Maximum operating temperature
70 °C
Technical details
Interface
PCI Express 4.0
S.M.A.R.T. support
Yes
Operating temperature (T-T)
0 - 70 °C
TRIM support
Yes
Operating shock
1500 G
Hardware encryption
Yes
SSD form factor
M.2
Weight & dimensions
Package type
Box
Width
80.2 mm
Weight
9 g
Height
22.1 mm
Depth
2.38 mm
Packaging data
Package type
Box
Samsung MZ-V8P2T0BW internal solid state drive M.2 2 TB PCI Express 4.0 V-NAND MLC NVMe
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